79 4, 2011 621.315.592 HgCdTe 1, 2 . . , . . HgCdTe - , . , , - , , . PACS: 72.20.My, 72.80.Ey, 73.25.+i, 73.63.-b : , QMSA. , HgCdTe, , . 1015 50 HgCdTe [1], [2, 3]. , - , - -3 RH Hg1-xCdxTe (x 0,2), InSb ( ). . 1, n. , [4], . , , , , - - RH , . 60- , - - InSb, , InSb. n . - , HgCdTe - , 1017 -3 . , 1 2 , 1, 2 , . " ". , 79012, , . . (+38032) 275-93-38. , 13. - , RH RH ( . 1, ). , . , 35-959, , E-mail: [email protected] , 16 . , . . . , 39614, , . , 20. . (+38 0536) 71-22-36. E-mail: [email protected] 26 . ., . . 2010 . . ., 2011 , . HgCdTe, , , , - 80 4, 2011 . . , , . , , , . HgTe [5]. .2 , . - ( , ) [6—8]. (1 – x 0,17; 2 – x , RH Hg1-xCdxTe - 0,12), . , , , , . , [12]. 105 2 " . , 600 150 400 100 1 RH, 3 3 RH, 103 RH, 3 104 2 RH, 3 1 102 " 2 1000 . 105 103 - RH( ) — [9—11]. 104 1 102 3 101 0 40 80 120 103 , –1 T . 1. 101 0 200 80 160 103 , –1 T ( ) RH: — 0 0 0,1 1,0 10 , . 2. n ; <1017 -3; >1017 -3. RH; — 50 2 240 ( ) RH Hg1-xCdxTe (x 0,2). RH: 1 — 2— 3— Hg1-xCdxTe (1 — x 0,17; 2 — x , , , 100 , - , n [15]. [13]. " , " , , RH, , - , . 0,12), - [14] RH " , - ( ; - . 3, ) [16]. , , - 81 4, 2011 100—400 . , - . , , 300 , - . , ( ) . n , , , , . . n- , - . [15]. 25 25 25 25 . 3. — ; — - , ; — (111) : Hg1-xCdxTe. 82 4, 2011 , n , . 3, ), . 3, ) ( ( , 1,09 ( ( . 3, RH( ), , , - , 1 . 4), , ) — ( . 4) [17]. , - . 2 , , - . . , , , , 1,40 . 2 1,30 - . ) - RH/RH (10 1,20 : 1,10 RH ( B) 1 1,00 0,01 0,1 1,0 ( B) 10 , nq RH, n-Hg1-xCdxTe, RH 10 . 1 xx , xy . 3, , , 2— n , . B2 2 B 2 2 1 B , (3) , (4) — ; q— B— ; . N HgCdTe " xy HgCdTe , , , i , 2 2 B i N n q 2B i i i . 2 2 i 1 iB i 1 , , . (5) (6) - [23], - [20—22]. ni qi N xx - , " Al2O3 : , . , SiO2 (2) , - n 2 1 nq HgCdTe (1) : . 4. [18, 19]. 1 , nq 1 , nq - 83 4, 2011 - . : M 2 i ( N exp xx ( Bi ) [( exp xx ( Bi ) j 2 xx ( Bi )) j N s(E) s( ) [25, 26] . 5. j 2 xy ( Bi )) ]. j (7) — N— j . nj , - , - , , - . s( ) , . , s( ) - , 3. . " s( ) " [24], - - . , - " : ". s p ( ) sn ( ) xx 1 2 2 B ( s p ( ) s n ( )) B xy 1 2 (8) d , B2 (9) d . sp( ), sn( ) — " , E(k) E S(E) E - QMSA (Quantitative Mobility Spectrum Analysis — ) [27, 28], i-QMSA (improved-Quantitative Mobility Spectrum Analysis) [29, 30], MEMSA (Maximum Entropy Mobility Spectrum Analysis — ) [31], , . + (E) S( ) E S KT EF k xx ( H ) xx ( H ) S S (E) 1 ( ( E ) H )2 S (k ) 1 ( (k ) H ) 2 0 dE xx ( H ) dk . 5. 0 S( ) 1 ( H )2 d s(E) (E) — s( ). , EF — E(k) , , kT — [26] 84 4, 2011 QMSA i-QMSA . , - , . QMSA . . 6 .7 100 -Hg1-xCdxTe (x 0,22) 20 [33]. , , , . . QMSA [32]. , 1 3 2 h 10–3 10–5 10–7 102 103 104 105 , . 6. 2/( 106 ) 4 ( 3 ), , 0,009 9 [32] n set set nQMSA, QMSA - QMSA - set , 2 e1 e2 e3 h -600 -1 104 -3,7 104 3 103 nset , QMSA , 2 -3 -1 1014 -5 1012 -1 1012 1 1013 -601 -1,02 104 -3,75 104 3,03 103 nQMSA, -3 -1,00 1014 -5,01 1012 -9,66 1011 1,00 1013 . 7. i-QMSA , -Hg1-xCdxTe (x 20 0,1 % — 0,22) : 4 ; — 30 . 100 12 , . [33] , . , , ("ghost" peaks), . - , (87,2 %) 439 2 . - . - , 85 4, 2011 - 10–1 10–2 , . - ( 0,2 , ) , 0,85 %, , ( ) 45,8 % 2 . 17467 10–3 - , 10–4 102 - 104 , , , QMSA . , . DMSA Analysis — ) [34, 35]. , " (Discrete Mobility " Spectrum - , 1013 c . p-InSb , , - /( ) , 2 /( ) 10–2 10–3 10–4 10–5 102 103 104 - -3 , ) , 105 2 ( 2 481 103 . 8. QMSA 105 , n-Si 296 ( ) ( ) [36]. [37]. , B (1 + C(R –1), , QMSA, — R = 2/ 1 - , , — . . , , ", Hg1-xCdxTe " QMSA n-Si ( [38], . 8). " . " . - , , . — . , - HEMT (High . . [39]. , - Electron Mobility Transistor) 1,5 Al0,88In0,12N/AlN/GaN/AlN i-QMSA - 86 4, 2011 , , Al0,88In0,12N/AlN GaN/AlN [40]. , . , . , , , , - , , - . 1. 2. AIIBVI/ . 3. 4. . .// . , . . . , 1986. . . .— : . ., . 2003. . 173. . 649. . . . , . . .— .: , 2000. . ., . . - .— : . , 1984. 5. . ., . . // . 1972. . 62. . 713. 6. O. H., . ., . ., . . // . 1974. . 66. . 330. 7. . ., O. H., . ., . , . ., . . // . 1974. . 20. . 370. 8. Tsidilkovski I. M., Harus G. I., Shelushinina N. 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Analysis techniques for the evaluation of HgCdTe multicarrier transport parameters 1 N. N. Berchenko1, 2 National University "Lviv Polytechnic", 13 Bandera str., Lviv, 79012, Ukraine Institute of Physics, Rzeszow University, 16a Rejtana str., Rzeszów, 35-959, Poland E-mail: [email protected] 2 87 4, 2011 A. I. Yelizarov M. Ostrogradski Kremenchuk State Politechnical University, 20 Perszotravneva str., Kremenchuk, 39614, Ukraine E-mail: [email protected] The paper examines the findings of the investigation of kinetic effects in HgCdTe which have been carried out since the first samples of this material were grown. This long-lasting research has multifold importance since not only the main parameters of carriers, but structural perfection of the material were assayed. In addition, it enabled those experimental techniques to find a new application in the investigation of multi-layer semiconductor structures. PACS: 72.20.M, 72.80.Ey, 73.25.+i, 73.63.-b Keywords: HgCdTe, variable magnetic field, Hall effect, multilayered structures, quantitative mobility spectrum analysis (QMSA). Bibliography — 40 references. Received August 26, 2010