auips7111s

November, 29th 2009
Automotive grade
AUIPS7111S
CURRENT SENSE HIGH SIDE SWITCH
Product Summary
Features
Suitable for 24V systems Over current shutdown
Over temperature shutdown Current sensing Active
clamp Low current Reverse battery ESD protection
Optimized Turn On/Off for EMI
Rds(on) 7.5 m max. Vclamp 65V
Applications
24V loads for trucks
Description
The AUIPS7111S is a fully protected four terminal high
side switch. It features current sensing, over-current,
over-temperature, ESD protection and drain to source
active clamp. When the input voltage Vcc - Vin is higher
than the specified threshold, the output power Mosfet is
turned on. When the Vcc -Vin is lower than the specified
Vil threshold, the output Mosfet is turned off. The Ifb pin is
used for current sensing.
Typical Connection
Current shutdown 30A min.
Package
AUIPS7111S
2
www.irf.com
Qualification Information
†
Qualification Level
Automotive (per AEC-Q100††)
Comments: This family of ICs has passed an Automotiv
Consumer qualification level is granted by extension of
Moisture Sensitivity Level
D2PAK-5L
Machine Model
Human Body Model
Charged Device Model
ESD
Class M3 (300V) (per AEC-Q100-003)
Class H2 (2,500 V) (per AEC-Q100-002)
Class C4 (1000 V) (per AEC-Q100-011)
Class II, Level A (per AEC-Q100-004)
Yes
IC Latch-Up Test
RoHS Compliant
Symbol
Parameter
Vout
Vcc-Vin
max.
Ifb, max.
Maximum output voltage
MSL1, 260°C
M
Vc
Maximum Vcc voltage
-
-
Pd
Maximum feedback current
Maximum power dissipation (internally limited by thermal protection) Tambient=25°C, Tj=150°C Rth=50°C/W
D²Pack 6cm² footprint
Tj max.
Max. storage & operating junction temperature
Symbol
-
Parameter
T
Rth1
Thermal resistance junction to ambient D²Pak Std footprint
Rth2
Thermal resistance junction to ambient D²pak 6cm² footprint
Thermalcan
resistance
to case D²pak
†Rth3
Qualification standards
be foundjunction
at International
Rectifier’s web site http://www.irf.com/
Symbol
Min.
Typ.
††
Exceptions toParameter
AEC-Q100 requirements are noted in the qualification report.
Vcc op.
Operating voltage range
8
Rds(on)
ON state resistance Tj=25°C
ON state resistance Tj=150°C
Icc off
Iout off
12
2
Max.
Units
50
V
6
7.5
m
Ids=1
2
6
µA
Vin=V
d Vou
6
V clamp1
V clamp2
Vih(2)
Vcc to Vout clamp voltage 1
Vcc to Vout clamp voltage 2
High level Input threshold voltage
60
Vil(2)
Low level Input threshold voltage
3.5
Rds(on) rev
Reverse On state resistance Tj=25°C
Reverse On state resistance Tj=150°C
0.75
0.8
Vf
Forward body diode voltage Tj=25°C
Forward body diode voltage Tj=125°C
0.6
Test
15
Supply leakage current
Output leakage current
6
4
0
65
66
5.5
Id=10
Id
6.8
V
7
10
m
13
18
Isd=1
Vcc-V
V
If=10A
5
0.65
Rin
Internal input resistor
180
250
350
Symbol
Parameter
Min.
Typ.
Max.
Units
Test
tdon
Turn on delay time to 20%
25
35
50
µs
See fi
80
120
µs
Max.
Units
Test
60
6
°C
A
mA
See fi
See fi
See fi
Units
Test
tr
tdoff
tf
Rise time from 20% to 80% of Vcc
8
17
5
13
Turn off delay time
Fall time from 80% to 20% of Vcc
Tj=-40
25
50
35
Symbol
Parameter
Min.
Typ.
Tsd
Isd
I fault
Over temperature threshold
Over-current shutdown
Ifb after an over-current or an over-temperature (latched)
150(3)
30
2.4
165
45
4
Symbol
Parameter
Min.
Typ.
Max.
Ratio
I load / Ifb current ratio
11000
13000
14500
Ratio_TC
I offset
I load / Ifb variation over temperature
Load current offset
-5%
-0.25
0
0
+5
0.25
Iout=1
%
A
Iout<1
AUIPS7111S
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur.
(Tj= -40°C..150°C, Vcc=8..50V unless otherwise specified).
Qualification Level
Automotive (per AEC-Q100††)
Comments: This family of ICs has passed an Autom
Consumer qualification level is granted by extension
Moisture Sensitivity Level
D2PAK-5L
ESD
Machine Model
Human Body Model
Charged Device Model
MSL1, 26
Class M3 (300V) (per AEC-Q100-003)
Class H2 (2,500 V) (per AEC-Q100-002)
Class C4 (1000 V) (per AEC-Q100-011)
Class II, Level A (per AEC-Q100-004)
Yes
Automotive
(per AEC-Q100††)
Comments: This family of ICs has passed an Autom
Consumer qualification level is granted by extension
IC Latch-Up Test
RoHS Compliant
Qualification
Level
Symbol
Parameter
Vout
Maximum output voltage
Vcc-Vin
Maximum
Vcc voltage
Moisture
Sensitivity
Level
D2PAK-5L
MSL1, 26
max.
Thermal Characteristics
Ifb, max.
Maximum
feedback
current
Machine Model
Class M3 (300V) (per AEC-Q100-003)
Maximum
power
dissipation
Tambient=25°C,
Tj=150°C
Rth=50°C/W
Class
H2 (2,500 V) (per
AEC-Q100-002)
ESD
Human
Body
Model (internally limited by thermal protection)
Pd
D²Pack 6cm² footprint
Class C4 (1000 V) (per AEC-Q100-011)
Charged Device
Model
Recommended Operating
Conditions
Tj max.
Max. storage & operating junction temperature
IC
Latch-Up Test
Class II, Level A (per AEC-Q100-004)
RoHS
CompliantParameter
Yes
Symbol
Rth1
Thermal resistance junction to ambient D²Pak Std footprint
Symbol
Parameter
Rth2
Thermal output
resistance
junction to ambient D²pak 6cm² footprint
Vout
Maximum
voltage
Rth3
Thermal resistance junction to case D²pak
Vcc-Vin
Maximum
Vcc voltage
These
values are given
for a quick
design.
max.
Symbol
Parameter
Min.
Typ.
Max.
Units
Te
Ifb,
max.
Maximum
current
Vcc op.
Operating feedback
voltage range
8
50
V
Maximum power dissipation (internally limited by thermal protection) Tambient=25°C, Tj=150°C Rth=50°C/W
Rds(on)
ON state6cm²
resistance
Tj=25°C
6
7.5
m
Ids
Pd
D²Pack
footprint
Tj max.
Symbol
Icc off
Rth1
Iout off
Rth2
Rth3
V clamp1
V clamp2
Symbol
Vih(2)
Vcc
op.
Vil(2)
Rds(on)
ON state resistance Tj=150°C
12
Max. storage & operating junction temperature
Parameter
Supply
leakage current
Thermal resistance junction to ambient D²Pak Std footprint
Output
current
2
Thermalleakage
resistance
junction to ambient D²pak 6cm² footprint
Thermal
junction
Vcc
to Voutresistance
clamp voltage
1 to case D²pak
Vcc to Vout clamp voltage 2
Parameter
High level voltage
Input threshold
Operating
range voltage
Rds(on) rev
Lowstate
level resistance
Input threshold
voltage
ON
Tj=25°C
Reverse
On
state
resistance
Tj=25°C
ON state resistance Tj=150°C
Icc off
Vf
Reverse On state resistance Tj=150°C
Supply leakage current
Forward body diode voltage Tj=25°C
Iout off
12
Forwardleakage
body diode
voltage Tj=125°C
Output
current
0.6
2
15
2
Max.
8
3.5
5.5
6.8
50
V
V
5
6
7
7.5
10
m
m
13
2
0.75
18
6
0.8
µA
V
15
Tsd
Rin
Isd
Symbol
I fault
tdon
Symbol
Forward body diode voltage Tj=125°C
0.6
Over temperature threshold
Internal
input shutdown
resistor
Over-current
Parameter
Ifb after an over-current or an over-temperature (latched)
Turn
on delay time to 20%
Parameter
0.65
150(3)
180
30
Min.
2.4
25
Min.
tr
Ratio
Rise /time
from 20%
I load
Ifb current
ratioto 80% of Vcc
tdoff
Turn off delay time
13
8
17
Id=
Ids
Isd
Vc
Vin
If=V
d
0.65
6
tf
Vf
5
Te
66
Typ.
Reverse
On state
Turn off delay
timeresistance Tj=25°C
Reverse On state resistance Tj=150°C
Fall time from 80% to 20% of Vcc
Forward body diode voltage Tj=25°C
Parameter
Units
65
Min.
Rds(on)
rev
tdoff
Symbol
Vin
dV
6
Internal
inputclamp
resistor
Vcc
to Vout
voltage 1
Vcc
to Vout clamp voltage 2
Parameter
High
Inputtime
threshold
Turn level
on delay
to 20%voltage
Low
level
Input
voltage
Rise
time
fromthreshold
20% to 80%
of Vcc
17
µA
60
Rin
V
clamp1
V
clamp2
Symbol
Vih(2)
tdon
Vil(2)
tr
8
6
180
60
250
65
350
Min.
66
Typ.
Max.
25
3.5
25
5.5
35
5
6.8
50
V
µs
50
7
80
13
10
120
18
m
µs
Isd
Vc
35
Se
Units
V
If=
165
250
45
Typ.
4
35
Typ.
350
60
Max.
6
50
Max.
°C
A
Units
mA
µs
Units
Se
Tj=
Se
Te
Se
Se
Te
25
11000
13000
14500
50
80
120
Typ.
0.8
Te
Max.
Min.
0.75
Tj=
Id=
Units
Te
Iou
µs
AUIPS7111S
4
www.irf.com
Qualification Level
Automotive (per AEC-Q100††)
Comments: This family of ICs has passed an Autom
Consumer qualification level is granted by extension
Moisture Sensitivity Level
D2PAK-5L
Machine Model
Human Body Model
Charged Device Model
ESD
Class M3 (300V) (per AEC-Q100-003)
Class H2 (2,500 V) (per AEC-Q100-002)
Class C4 (1000 V) (per AEC-Q100-011)
Class II, Level A (per AEC-Q100-004)
Yes
IC Latch-Up Test
RoHS Compliant
Symbol
Parameter
Vout
Vcc-Vin
max.
Ifb, max.
Maximum output voltage
MSL1, 26
Maximum Vcc voltage
Pd
Maximum feedback current
Maximum power dissipation (internally limited by thermal protection) Tambient=25°C, Tj=150°C Rth=50°C/W
D²Pack 6cm² footprint
Tj max.
Max. storage & operating junction temperature
Symbol
Parameter
Rth1
Rth2
Rth3
Thermal resistance junction to ambient D²Pak Std footprint
Thermal resistance junction to ambient D²pak 6cm² footprint
Thermal resistance junction to case D²pak
Symbol
Parameter
Vcc op.
Operating voltage range
Min.
Rds(on)
ON state resistance Tj=25°C
ON state resistance Tj=150°C
Icc off
Iout off
Typ.
Max.
Units
50
V
6
7.5
m
Ids
2
6
µA
Vin
dV
8
12
15
Supply leakage current
Output leakage current
2
6
V clamp1
V clamp2
Vih(2)
Vcc to Vout clamp voltage 1
Vcc to Vout clamp voltage 2
High level Input threshold voltage
60
Vil(2)
Low level Input threshold voltage
3.5
Rds(on) rev
Reverse On state resistance Tj=25°C
Reverse On state resistance Tj=150°C
0.75
0.8
Vf
Forward body diode voltage Tj=25°C
Forward body diode voltage Tj=125°C
0.6
Te
65
66
5.5
Id=
6.8
V
7
10
m
13
18
Isd
Vc
V
If=
5
0.65
Rin
Internal input resistor
180
250
350
Symbol
Parameter
Min.
Typ.
Max.
Units
Te
tdon
Turn on delay time to 20%
25
35
50
µs
Se
80
120
µs
Typ.
Max.
Units
Te
60
6
°C
A
mA
Se
Se
Se
Units
Te
tr
tdoff
tf
Symbol
Rise time from 20% to 80% of Vcc
Turn off delay time
8
17
Tj=
25
50
Static
Electrical5Characteristics
Fall time from 80% to 20%
of Vcc
13
35
Parameter
Tj=-40..150°C, Vcc=8..50V (unless otherwise specified)
Min.
Tsd
Over temperature threshold
150(3)
Isd thresholds Over-current
30 6
(2) Input
are measuredshutdown
directly between the input pin and the tab. See also page
I fault
Ifb after an over-current or an over-temperature (latched)
2.4
Switching
Electrical
Characteristics
Symbol
Parameter
Ratio
I load / Ifb current ratio
Ratio_TC
I load / Ifb variation over temperature
165
45
4
Min.
Typ.
Max.
11000
13000
14500
-5%
0
+5
Iou
%
Vcc=28V, Resistive load=3 , Tj=25°C
Protection Characteristics
Tj=-40..150°C, Vcc=8..50V (unless otherwise specified)
Current Sensing Characteristics
Tj=-40..150°C, Vcc=8..50V (unless otherwise specified)
(3) Guaranteed by design
Qualification Level
Automotive (per AEC-Q100††)
Comments: This family of ICs has passed an Autom
Consumer qualification level is granted by extension
Moisture Sensitivity Level
D2PAK-5L
Machine Model
Human Body Model
Charged Device Model
ESD
IC Latch-Up Test
Qualification
Level
RoHS Compliant
Symbol
Parameter
MSL1, 26
Class M3 (300V) (per AEC-Q100-003)
Class H2 (2,500 V) (per AEC-Q100-002)
Class C4 (1000 V) (per AEC-Q100-011)
Automotive
(perA AEC-Q100
††)
Class II, Level
(per AEC-Q100-004)
Yes
Comments:
This family of ICs has passed an Autom
Consumer qualification level is granted by extension
Vout
Maximum output voltage
Moisture Sensitivity Level
D2PAK-5L
MSL1, 26
Vcc-Vin
Maximum Vcc voltage
max.
Machine Model
Class M3 (300V) (per AEC-Q100-003)
Ifb,
Maximum
feedback
current
Class H2 (2,500 V) (per AEC-Q100-002)
Human
Body Model
ESDmax.
Maximum
powerDevice
dissipation
Tambient=25°C,
Tj=150°C
Rth=50°C/W
Class
C4 (1000 V) (per
AEC-Q100-011)
Charged
Model(internally limited by thermal protection)
Pd
D²Pack 6cm² footprint
Automotive
(perA AEC-Q100
††)
IC Latch-Up Test
Class II, Level
(per AEC-Q100-004)
Qualification
Level
Comments:
This family of ICs has passed an Autom
RoHS
Yes
Tj max.Compliant
Max. storage & operating junction temperature
Consumer qualification level is granted by extension
Symbol
Parameter
Parameter
Vout
Maximum
output
voltage
Rth1
Thermal
resistance
junction to ambient D²Pak Std footprint
Moisture
Sensitivity
Level
D2PAK-5L
MSL1, 26
Vcc-Vin
Rth2
Thermal Vcc
resistance
Maximum
voltagejunction to ambient D²pak 6cm² footprint
max.
Machine
Model junction to case D²pak
Class M3 (300V) (per AEC-Q100-003)
Rth3
Thermal
resistance
Ifb, max.
Maximum
feedback
current
Class
V) (per AEC-Q100-002)
ESD
Human
Body Model
Symbol
Parameter
Min.H2 (2,500
Typ.
Max.
Units
Te
Maximum
power
dissipation
Tambient=25°C,
Tj=150°C
Rth=50°C/W
Class
C4 (1000 V) (per
AEC-Q100-011)
Charged
Device
Model(internally limited by thermal protection)
Vcc
op.
Operating
voltage
range
8
50
V
Pd
D²Pack 6cm² footprint
IC Latch-Up Test
Class II, Level A (per AEC-Q100-004)
Rds(on)
ON state resistance Tj=25°C
6
7.5
m
Ids
RoHS
Yes
Tj max.Compliant
Max. storage & operating junction temperature
ON state resistance Tj=150°C
12
15
Symbol
Parameter
Symbol
Vout
Rth1
Icc off
Vcc-Vin
Rth2
max.
Iout off
Rth3
Ifb,
max.
Symbol
V clamp1
Vcc
op.
V clamp2
Pd
Vih(2)
Rds(on)
Tj
max.
Vil(2)
Symbol
Rds(on) rev
Rth1
Icc off
Rth2
Parameter
Maximum
output
voltage
Thermal
resistance
junction to ambient D²Pak Std footprint
Supply
leakage
current
2
6
µA
Thermal
resistance
Maximum Vcc voltagejunction to ambient D²pak 6cm² footprint
Output
current
2
6
Thermalleakage
resistance
junction to case D²pak
Maximum
feedback
current1
Parameter
Min.
Typ.
Max.
Units
Vcc to Vout
clamp voltage
60
65
Maximum
power dissipation
(internally limited by thermal protection)8Tambient=25°C, Tj=150°C Rth=50°C/W
Operating
Vcc
to Voutvoltage
clamp range
voltage 2
66
50
V
D²Pack 6cm² footprint
V
High level Input threshold voltage
5.5
6.8
ON state resistance Tj=25°C
6
7.5
m
Max.
storage
& threshold
operating voltage
junction temperature
Low level
Input
3.5
5
ON state resistance Tj=150°C
12
15
Parameter
Reverse
On state resistance Tj=25°C
7
10
m
Thermal
resistance
junction to ambient D²Pak Std footprint
Supply
leakage
current
2
6
µA
Reverse
On
state
resistance
Tj=150°C
13
18
Thermal resistance junction to ambient D²pak 6cm² footprint
Vin
dV
Te
Id=
Ids
Isd
Vin
Vc
dV
AUIPS7111S
Lead Assignments
AUIPS7111S
6
www.irf.com
Qualification Level
Automotive (per AEC-Q100††)
Comments: This family of ICs has passed an Autom
Consumer qualification level is granted by extension
Moisture Sensitivity Level
D2PAK-5L
MSL1, 26
Truth Table
Class M3 (300V) (per AEC-Q100-003)
Machine Model
Human Body Model
Charged Device Model
Class H2 (2,500 V) (per AEC-Q100-002)
Class C4 (1000 V) (per AEC-Q100-011)
Operating voltage
IC Latch-Up Test
Class II, Level A (per AEC-Q100-004)
Maximum Vcc voltage : this is the
RoHS voltage
Compliant
maximum
before the breakdown of the IC process. Operating voltage : ThisYes
is the Vcc range in which the functionality of the
part Symbol
is guaranteed. Parameter
The AEC-Q100 qualification is run at the maximum operating voltage specified in the datasheet.
Vout
Maximum output voltage
Vcc-Vin battery
Reverse
Maximum Vcc voltage
max.
During the reverse battery the Mosfet is turned on if the input pin is powered with a diode in parallel of the input transistor. Power
Ifb,
max.
Maximum
feedback
dissipation in the IPS
: P = Rdson
rev * Icurrent
load² + Vcc² / 250 ( internal input resistor ). If the power dissipation I too hight in Rifb, a diode
Maximum
power
dissipation (internally limited by thermal protection) Tambient=25°C, Tj=150°C Rth=50°C/W
in serial
can
be
added
to
block
the
current.
Pd
D²Pack 6cm² footprint
ESD
Tj max.clampMax. storage & operating junction temperature
Active
The Symbol
purpose of the active
clamp is to limit the voltage across the MOSFET to a value below the body diode break down voltage to
Parameter
reduce
the amount ofThermal
stress onresistance
the devicejunction
during to
switching.
temperature
increase during active clamp can be estimated as follows:
Rth1
ambientThe
D²Pak
Std footprint
Rth2
Thermal
resistance junction to ambient D²pak 6cm² footprint
P
Z
(t
)
Tj Rth3
CL TH CLAMP
Where:
Z (t ) is
the thermal
impedance
at tCLAMP and can be read from the thermal impedance curves given
Thermal
resistance
junction
to case
D²pak
in the
Symbol
Parameter
Min.
Typ.
Max.
Units
Te
TH CLAMP
Vcc op.
Operating voltage range
data sheets. P V I : Power dissipation during active clamp
CL CL
CLavg
Rds(on)
ON state resistance Tj=25°C
39V : Typical V
CLAMP value
ON
state resistance Tj=150°C
8
12
50
V
6
7.5
m
Ids
2
6
µA
Vin
dV
15
V
CL
Icc off
Supply leakage current
CL : Average current during active clamp
IoutI off
Output leakage current
I
CLavg
V clamp1
Vcc to Vout clamp voltage 1
2
6
60
V clamp2
Vcc to Vout clamp voltage 2
2
Vih(2)
High
level Input threshold voltage
I : Active clamp
duration
Vil(2)t
CL CL
Rds(on) rev
di dt
VfV
di
V
Low level Input threshold voltage
3.5
Id=
6.8
V
m
Isd
Vc
V
If=
5
Reverse On state resistance Tj=25°C
7
10
Reverse On state resistance Tj=150°C
13
18
0.75
0.8
Forward body diode voltage Tj=25°C
Forward body diode voltage Tj=125°C
Battery CL : Demagnetization current
Rin
Internal input resistor
dt L
Symbol
65
66
5.5
0.6
Parameter
0.65
180
250
350
Min.
Typ.
Max.
Tj=
Units
Te
tdon
Turn on delay time to 20%
25
35
50
µs
Se
Figuretr 9 gives the maximum
: the part switch off after an over temperature
Rise time inductance
from 20% toversus
80% ofthe
Vccload current 8in the worst
17 case 25
detection. If the load inductance exceed the curve, a free wheeling diode is required.
tdoff
Turn off delay time
50
80
120
µs
tf
Fall time from 80% to 20% of Vcc
5
13
35
Symbol
Parameter
Min.
Typ.
Tsd
Isd
I fault
Over temperature threshold
Over-current shutdown
Ifb after an over-current or an over-temperature (latched)
150(3)
30
2.4
165
45
4
Max.
Units
Te
60
6
°C
A
mA
Se
Se
Se
Symbol
Parameter
Min.
Ratio
I load / Ifb current ratio
11000
Typ.
Max.
Units
Te
13000
14500
Ratio_TC
I offset
I load / Ifb variation over temperature
Load current offset
-5%
-0.25
0
0
+5
0.25
Iou
%
A
Iou
AUIPS7111S
Input level VIH/VIL
The input level are referenced to Vcc. When Vcc-Vin exceed VIH the part turns on and when Vcc-Vin goes below VIL the part turns off
Current sensing accuracy
The current sensing is specified by measuring 3 points :
Ifb1 for Iout1
Ifb2 for Iout2
Ifb leakage for Iout=0
The parameters in the datasheet are computed with the
following formula : Ratio = ( Iout2 – Iout1 )/( Ifb2 – Ifb1) I
offset = Ifb1 x Ratio – Iout1
This
allows
the
designer
to
evaluate
the Ifb for
any Iout value using : Ifb = ( Iout + I offset ) / Ratio if Ifb > Ifb leakage
For some applications, a calibration is required. In that case, the accuracy of the system will depends on the variation of the I offset and
the ratio over the temperature range. The ratio variation is given by Ratio_TC specified in page 4. The Ioffset variation depends directly
of the Rdson : I offset@-40°C= I offset@25°C / 0.7 I offset@150°C= I offset@25°C / 1.9
Over-current protection
The threshold of the over-current protection is set in order to guaranteed that the device is able to turn on a load with an inrush current
lower than the minimum of Isd. Nevertheless for high current and high temperature the device may switch off for a lower current due to
the over-temperature protection (see Figure 10).
AUIPS7111S
Qualification Level
Moisture Sensitivity Level
Machine Model
Human Body Model
Charged Device Model
ESD
IC Latch-Up Test
RoHS Compliant
Ids
Vds
Symbol
Parameter
Vout
Vcc-Vin
max.
Ifb, max.
Maximum output voltage
Maximum
Vcc voltage
Vcc-Vin
Pd
Maximum feedback current
Maximum power dissipation (internally lim
D²Pack 6cm² footprint
Tj max.
Max. storage & operating junction temper
Symbol
Parameter
Rth1
Rth2
Rth3
Thermal resistance junction to ambient
Thermal resistance junction to ambient
Thermal resistance junction to case D²p
Symbol
Parameter
Vcc op.
Operating voltage range
Rds(on)
ON state resistance Tj=25°C
See Application Notes to evaluate power dissipation
ON state resistance Tj=150°C
Icc off
Iout off
V clamp1
V clamp2
Figure 1 – IN rise time & switching definitions Figure 2 – Active clamp Vih(2)
waveforms
Vil(2)
Rds(on) rev
Supply leakage current
Output leakage current
Vcc to Vout clamp voltage 1
Vcc to Vout clamp voltage 2
High level Input threshold voltage
Low level Input threshold voltage
Reverse On state resistance Tj=25°C
Reverse On state resistance Tj=150°C
30 Vin
Vf
Forward body diode voltage Tj=25°C
Rin
Internal input resistor
Symbol
Parameter
tdon
Turn on delay time to 20%
Forward body diode voltage Tj=125°C
tr
tdoff
tf
25 Ids
Rise time from 20% to 80% of Vcc
Turn off delay time
Fall time from 80% to 20% of Vcc
Symbol
Parameter
Tsd
Isd
I fault
Over temperature threshold
Over-current shutdown
Ifb after an over-current or an over-tempe
Symbol
Parameter
Ratio
I load / Ifb current ratio
Ratio_TC
I load / Ifb variation over temperature
I shutdown
20 15 10
Tj
Tshutdo
wn Tsd 165°C
V fault Vifb
0 -50 0 50 100 150
Icc off, supply
5
leakage current (µA)
Tj, junction temperature (°C)
Figure 3 – Protection timing diagram Figure 4 – Icc off (µA) Vs Tj (°C)
AUIPS7111S
565
4
0 10 20 30 40
Rds(on), Drain-to-Source On Resistance Icc, supply current
(µA)4 3 2 Zth, transient thermal impedance (°C/W) Vih and
Vil (V)3 2 1 1 00 50 Vcc-Vout, supply voltage (V) Tj, junction
temperature (°C)
Figure 5 – Icc Off(µA) Vs Vcc-Vout (V) Figure 6 – Vih
and Vil (V) Vs Tj (°C)
200% 100
-50 0 50 100 150
1E-4 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2
(Normalized)100% 50% 1 0.1 0.01
Tj, junction temperature (°C) Time (s)
Figure 7 - Normalized Rds(on) (%) Vs Tj (°C) Figure 8 – Transient thermal impedance (°C/W) Vs time (s)
9
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10 150%
AUIPS7111S
100
100
Max.
output
current
(A)
°
10
'
1
+
2
2
5
5
°
°
C
C
'
+
10 1
'
4
0
C
1
0.1 1.E+00 1.E+01 1.E+02 1.E+03 1.E+04
0 10 20 30 40 Inductance (µH) Iout, output current (A)
Vs I out (A) SMD with 6cm²
AUIPS7111S
Case Outline D2PAK - 5 Leads
AUIPS7111S
Tape & Reel D2PAK - 5 Leads
AUIPS7111S
13
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Part Marking Information
Ordering Information
Qualification Level
Automotive (per AEC-Q100††)
Comments: This family of ICs has passed an Autom
Consumer qualification level is granted by extensio
Moisture Sensitivity Level
D2PAK-5L
Machine Model
Human Body Model
Charged Device Model
ESD
Class M3 (300V) (per AEC-Q100-003)
Class H2 (2,500 V) (per AEC-Q100-002)
Class C4 (1000 V) (per AEC-Q100-011)
Class II, Level A (per AEC-Q100-004)
Yes
IC Latch-Up Test
RoHS Compliant
Symbol
Parameter
Vout
Vcc-Vin
max.
Ifb, max.
Maximum output voltage
MSL1, 26
Maximum Vcc voltage
Pd
Maximum feedback current
Maximum power dissipation (internally limited by thermal protection) Tambient=25°C, Tj=150°C Rth=50°C/W
D²Pack 6cm² footprint
Tj max.
Max. storage & operating junction temperature
Symbol
Parameter
Rth1
Rth2
Rth3
Thermal resistance junction to ambient D²Pak Std footprint
Thermal resistance junction to ambient D²pak 6cm² footprint
Thermal resistance junction to case D²pak
Symbol
Parameter
Vcc op.
Operating voltage range
Rds(on)
ON state resistance Tj=25°C
ON state resistance Tj=150°C
Icc off
Iout off
Min.
12
Max.
Units
50
V
2
T
6
7.5
m
Id
2
6
µA
V
d
15
Supply leakage current
Output leakage current
Typ.
8
6
V clamp1
V clamp2
Vih(2)
Vcc to Vout clamp voltage 1
Vcc to Vout clamp voltage 2
High level Input threshold voltage
60
Vil(2)
Low level Input threshold voltage
3.5
Rds(on) rev
Reverse On state resistance Tj=25°C
65
66
5.5
Id
6.8
V
10
m
5
7
Is
AUIPS7111S
14
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other changes to its products and services at any time and to discontinue any product or services without
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unless the IR products are specifically designated by IR as military-grade or
AUIPS7111S
15
www.irf.com
“enhanced plastic.” Only products designated by IR as military-grade meet military specifications. Buyers
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