NPN SILICON PLANAR AVALANCHE TRANSISTOR ZTX415 ISSUE 4 - NOVEMBER 1995 FEATURES * Specifically designed for Avalanche mode operation * 60A Peak Avalanche Current (Pulse width=20ns) * Low inductance package APPLICATIONS * Laser LED drivers * Fast edge generation * High speed pulse generators * Suitable for single, series and parallel operation TYPICAL CHARACTERISTICS 180 80 30 100 3. 20 40 0 0 20 40 60 0 80 100 120 140 160 180 -60 -40 -20 0 Maximum Avalanche Current v Pulse Width IUSB v Temperature for the specified conditions 100 220 80 200 VCE =10V h - (V) 175°C 60 40 V 25°C 20 -55°C 100µA 1mA 10mA 100mA - (V) IB =200mA 160 155 150 1 10 V Emitter-Base Voltage VEBO 6 V Continuous Collector Current IC 500 mA Peak Collector Current (Pulse Width=20ns) ICM 60 A Power Dissipation Ptot 680 mW Operating and Storage Temperature Range Tj:Tstg -55 to +175 °C CONDITIONS. 140 V IC=1mA Tamb= -55 to +175°C Collector-Emitter Breakdown Voltage VCEO(sus) 100 V IC=100µ A Emitter-Base Breakdown Voltage V(BR)EBO 6 V IE=10µ A Collector Cut-Off Current ICBO 0.1 10 µA µA VCB=180V VCB=180V, Tamb=100°C Emitter Cut-Off Current IEBO 0.1 µA VEB=4V 160 Collector-Emitter Saturation Voltage VCE(sat) 0.5 V IC=10mA, IB=1mA* 150 Base-Emitter Saturation Voltage VBE(sat) 0.9 V IC=10mA, IB=1mA* 140 Current in Second Breakdown (Pulsed) ISB 15 25 A A VC=200V, CCE=620pF VC=250V, CCE=620pF Static Forward Current hFE Transfer Ratio 25 Transition Frequency fT 40 Collector-Base Capacitance Ccb IB =50mA IB =100mA IB =200mA 1n 10n 100n C = 620pF 20 40 60 80 100 120 140 160 180 Minimum starting voltage as a function of temperature 3-172 100 UNIT Temperature (°C) Minimum starting voltage as a function of drive current VCEO 260 100 -60 -40 -20 0 Risetime of Base Drive (mA/ns) V Collector-Emitter Voltage ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). 120 C=620pF UNIT 260 MIN. V - (V) IB =100mA VALUE VCBO V(BR)CES Minimum starting voltage as a function of capacitance 165 SYMBOL Collector-Base Voltage SYMBOL hFE v IC IB =60mA PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Capacitance (F) 170 E-Line TO92 Compatible PARAMETER 100 100p 1A E 160 Collector Current 175 V Risetime of Base Drive Current = 5mA/ns 180 120 180 145 20 40 60 80 100 120 140 160 180 Temperature (°C) Pulse Width (ns) C B ABSOLUTE MAXIMUM RATINGS. 10 1. 20 VC = 200V I 2. 60 0 VC = 250V - (A) - (A) I 140 120 40 1. >4x1011Operations Without Failure 2. 107 Operations To Failure 3. 103 Operations To Failure 160 ZTX415 TYP. MAX. IC=10mA, VCE=10V* 8 MHz IC=10mA, VCE=20V f=20MHz pF VCB=20V, IE=0 f=100MHz *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% 3-171 NPN SILICON PLANAR AVALANCHE TRANSISTOR ZTX415 ISSUE 4 - NOVEMBER 1995 FEATURES * Specifically designed for Avalanche mode operation * 60A Peak Avalanche Current (Pulse width=20ns) * Low inductance package APPLICATIONS * Laser LED drivers * Fast edge generation * High speed pulse generators * Suitable for single, series and parallel operation TYPICAL CHARACTERISTICS 180 80 30 100 3. 20 40 0 0 20 40 60 0 80 100 120 140 160 180 -60 -40 -20 0 Maximum Avalanche Current v Pulse Width IUSB v Temperature for the specified conditions 100 220 80 200 VCE =10V h - (V) 175°C 60 40 V 25°C 20 -55°C 100µA 1mA 10mA 100mA - (V) IB =200mA 160 155 150 1 10 V Emitter-Base Voltage VEBO 6 V Continuous Collector Current IC 500 mA Peak Collector Current (Pulse Width=20ns) ICM 60 A Power Dissipation Ptot 680 mW Operating and Storage Temperature Range Tj:Tstg -55 to +175 °C CONDITIONS. 140 V IC=1mA Tamb= -55 to +175°C Collector-Emitter Breakdown Voltage VCEO(sus) 100 V IC=100µ A Emitter-Base Breakdown Voltage V(BR)EBO 6 V IE=10µ A Collector Cut-Off Current ICBO 0.1 10 µA µA VCB=180V VCB=180V, Tamb=100°C Emitter Cut-Off Current IEBO 0.1 µA VEB=4V 160 Collector-Emitter Saturation Voltage VCE(sat) 0.5 V IC=10mA, IB=1mA* 150 Base-Emitter Saturation Voltage VBE(sat) 0.9 V IC=10mA, IB=1mA* 140 Current in Second Breakdown (Pulsed) ISB 15 25 A A VC=200V, CCE=620pF VC=250V, CCE=620pF Static Forward Current hFE Transfer Ratio 25 Transition Frequency fT 40 Collector-Base Capacitance Ccb IB =50mA IB =100mA IB =200mA 1n 10n 100n C = 620pF 20 40 60 80 100 120 140 160 180 Minimum starting voltage as a function of temperature 3-172 100 UNIT Temperature (°C) Minimum starting voltage as a function of drive current VCEO 260 100 -60 -40 -20 0 Risetime of Base Drive (mA/ns) V Collector-Emitter Voltage ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). 120 C=620pF UNIT 260 MIN. V - (V) IB =100mA VALUE VCBO V(BR)CES Minimum starting voltage as a function of capacitance 165 SYMBOL Collector-Base Voltage SYMBOL hFE v IC IB =60mA PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Capacitance (F) 170 E-Line TO92 Compatible PARAMETER 100 100p 1A E 160 Collector Current 175 V Risetime of Base Drive Current = 5mA/ns 180 120 180 145 20 40 60 80 100 120 140 160 180 Temperature (°C) Pulse Width (ns) C B ABSOLUTE MAXIMUM RATINGS. 10 1. 20 VC = 200V I 2. 60 0 VC = 250V - (A) - (A) I 140 120 40 1. >4x1011Operations Without Failure 2. 107 Operations To Failure 3. 103 Operations To Failure 160 ZTX415 TYP. MAX. IC=10mA, VCE=10V* 8 MHz IC=10mA, VCE=20V f=20MHz pF VCB=20V, IE=0 f=100MHz *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% 3-171