PHOTODIODE Si photodiode S1227 series For UV to visible, precision photometry; suppressed IR sensitivity Features Applications l High UV sensitivity: QE 75 % (λ=200 nm) l Suppressed IR sensitivity l Low dark current l Analytical equipment l Optical measurement equipment, etc. ■ General ratings / Absolute maximum ratings Type No. S1227-16BQ S1227-16BR S1227-33BQ S1227-33BR S1227-66BQ S1227-66BR S1227-1010BQ S1227-1010BR Dimensional outline/ Window material * ➀/Q ➁/R ➂/Q ➃/R ➄/Q ➅/R ➆/Q ➇/R Package Active area size Effective active area (mm) (mm) (mm2) 2.7 × 15 1.1 × 5.9 5.9 6 × 7.6 2.4 × 2.4 5.7 8.9 × 10.1 5.8 × 5.8 33 15 × 16.5 10 × 10 100 Absolute maximum ratings Operating Storage Reverse temperature temperature voltage Topr Tstg VR Max. (V) (°C) (°C) 5 -20 to +60 -20 to +80 ■ Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted) Type No. Spectral Peak response sensitivity range wavelength λp λ Short circuit Rise Terminal Shunt Dark current current Temp. time capacitance resistance Isc coefficient tr Ct ID Rsh 100 lx V R =10 m V TCID VR=0 V VR=0 V V R =10 mV He-Ne RL=1 kΩ f=10 kHz (GΩ) Min. Typ. Max. Laser (pF) Min. Typ. 633 nm (µA) (µA) (pA) (times/° C) (µs) 0.34 2 3.2 5 0.5 170 2 20 0.39 2.2 3.7 0.34 2 3.0 5 0.5 160 2 20 0.39 2.2 3.7 1.12 0.34 11 16 20 2 950 0.5 5 0.39 13 19 0.34 32 44 50 7 3000 0.2 2 0.39 36 53 Photo sensitivity S (A/W) λp 200 nm (nm) (nm) Min. Typ. 190 to 1000 S1227-16BQ 0.36 0.10 0.12 320 to 1000 S1227-16BR 0.43 190 to 1000 S1227-33BQ 0.36 0.10 0.12 320 to 1000 S1227-33BR 0.43 190 to 1000 720 0.36 0.10 0.12 S1227-66BQ 320 to 1000 S1227-66BR 0.43 S1227-1010BQ 190 to 1000 0.36 0.10 0.12 S1227-1010BR 320 to 1000 0.43 * Window material Q: quartz glass, R: resin coating NEP (W/Hz1/2) 2.5 × 10-15 2.1 × 10-15 2.5 × 10-15 2.1 × 10-15 5.0 × 10-15 4.2 × 10-15 8.0 × 10-15 6.7 × 10-15 1 Si photodiode ■ Spectral response ■ Photo sensitivity temperature characteristic (Typ. Ta=25 ˚C) PHOTO SENSITIVITY (A/W) 0.6 S1227-BR 0.5 0.4 S1227-BQ S1227-BQ 0.2 0.1 S1227-BR 0 190 400 600 800 (Typ. ) +1.5 TEMPERATURE COEFFICIENT (%/˚C) 0.7 0.3 S1227 series +1.0 +0.5 0 -0.5 190 1000 400 600 800 1000 WAVELENGTH (nm) WAVELENGTH (nm) KSPDB0094EA ■ Rise time vs. load resistance KSPDB0030EB ■ Dark current vs. reverse voltage (Typ. Ta=25 ˚C, VR=0 V) 1 ms (Typ. Ta=25 ˚C) 1 nA S1227-1010BQ/BR S1227-66BQ/BR 100 pA DARK CURRENT RISE TIME 100 µs 10 µs 1 µs S1227-1010BQ/BR S1227-66BQ/BR 10 pA 1 pA 100 ns S1227-33BQ/BR S1227-16BQ/BR S1227-16BQ/BR, -33BQ/BR 10 ns 102 103 104 105 KSPDB0095EA ■ Shunt resistance vs. ambient temperature (Typ. VR=10 mV) S1227-33BQ/BR SHUNT RESISTANCE 100 GΩ 10 GΩ S1227-16BQ/BR 1 GΩ 100 MΩ S1227-1010BQ/BR 10 MΩ S1227-66BQ/BR 1 MΩ 100 kΩ 10 kΩ -20 0 20 40 60 80 AMBIENT TEMPERATURE (˚C) KSPDB0097EA 2 0.1 1 10 REVERSE VOLTAGE (V) LOAD RESISTANCE (Ω) 1 TΩ 100 fA 0.01 KSPDB0096EB Si photodiode S1227 series ■ Dimensional outlines (unit: mm) HOLE (2 ×) 0.8 HOLE (2 ×) 0.8 ACTIVE AREA 2.7 ± 0.1 ➁ S1227-16BR 2.7 ± 0.1 ➀ S1227-16BQ ACTIVE AREA 0.5 LEAD 15 ± 0.15 13.5 ± 0.13 6.2 0.35 6.2 0.5 0.85 12.2 PHOTOSENSITIVE SURFACE 1.5 ± 0.1 13.5 ± 0.13 PHOTOSENSITIVE SURFACE 1.5 ± 0.1 15 ± 0.15 0.5 LEAD ANODE MARK ANODE MARK 8.5 ± 0.2 8.5 ± 0.2 Resin coating may extend a maximum of 0.1 mm above the upper surface of the package. KSPDA0094EA ➂ S1227-33BQ KSPDA0095EA ➃ S1227-33BR 7.6 ± 0.1 6.0 ± 0.1 2.0 ± 0.1 10.5 0.5 LEAD 0.65 0.35 2.0 ± 0.1 PHOTOSENSITIVE SURFACE 0.5 LEAD 10.5 0.1 0.75 PHOTOSENSITIVE SURFACE 0.35 ACTIVE AREA 6.0 ± 0.1 ACTIVE AREA 7.6 ± 0.1 4.5 ± 0.2 4.5 ± 0.2 5.0 ± 0.3 ANODE TERMINAL MARK ANODE TERMINAL MARK 5.0 ± 0.3 6.6 ± 0.3 6.6 ± 0.3 Resin coating may extend a maximum of 0.1 mm above the upper surface of the package. KSPDA0096EA KSPDA0097EA 3 Si photodiode ➄ S1227-66BQ S1227 series ➅ S1227-66BR 10.1 ± 0.1 8.9 ± 0.1 10.1 ± 0.1 8.9 ± 0.1 2.0 ± 0.1 10.5 0.5 LEAD 0.65 0.3 0.1 PHOTOSENSITIVE SURFACE 10.5 0.3 0.75 PHOTOSENSITIVE SURFACE ACTIVE AREA 2.0 ± 0.1 ACTIVE AREA 0.5 LEAD 9.2 ± 0.3 9.2 ± 0.3 7.4 ± 0.2 7.4 ± 0.2 ANODE TERMINAL MARK 8.0 ± 0.3 8.0 ± 0.3 ANODE TERMINAL MARK Resin coating may extend a maximum of 0.1 mm above the upper surface of the package. KSPDA0098EA ➆ S1227-1010BQ KSPDA0099EA ➇ S1227-1010BR 16.5 ± 0.2 0.5 LEAD 2.15 ± 0.1 10.5 10.5 0.8 PHOTOSENSITIVE SURFACE 0.3 0.1 0.9 0.3 PHOTOSENSITIVE SURFACE ACTIVE AREA 2.15 ± 0.1 ACTIVE AREA 15.0 ± 0.15 15.0 ± 0.15 16.5 ± 0.2 0.5 LEAD 15.1 ± 0.3 15.1 ± 0.3 12.5 ± 0.2 ANODE TERMINAL MARK 12.5 ± 0.2 13.7 ± 0.3 13.7 ± 0.3 ANODE TERMINAL MARK Resin coating may extend a maximum of 0.1 mm above the upper surface of the package. KSPDA0100EA KSPDA0101EA Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2004 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, http://www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 4 Cat. No. KSPD1036E04 Aug. 2004 DN