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s122716bq

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PHOTODIODE
Si photodiode
S1227 series
For UV to visible, precision photometry; suppressed IR sensitivity
Features
Applications
l High UV sensitivity: QE 75 % (λ=200 nm)
l Suppressed IR sensitivity
l Low dark current
l Analytical equipment
l Optical measurement equipment, etc.
■ General ratings / Absolute maximum ratings
Type No.
S1227-16BQ
S1227-16BR
S1227-33BQ
S1227-33BR
S1227-66BQ
S1227-66BR
S1227-1010BQ
S1227-1010BR
Dimensional
outline/
Window
material *
➀/Q
➁/R
➂/Q
➃/R
➄/Q
➅/R
➆/Q
➇/R
Package
Active
area size
Effective
active area
(mm)
(mm)
(mm2)
2.7 × 15
1.1 × 5.9
5.9
6 × 7.6
2.4 × 2.4
5.7
8.9 × 10.1
5.8 × 5.8
33
15 × 16.5
10 × 10
100
Absolute maximum ratings
Operating
Reverse
Storage
temperature
voltage
temperature
Topr
VR Max.
Tstg
(V)
(°C)
(°C)
5
-20 to +60
-20 to +80
■ Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)
Type No.
Spectral Peak
response sensitivity
range wavelength
λ
λp
Short circuit
Rise Terminal Shunt
Dark
current
current Temp. time capacitance resistance
Isc
tr
Ct
ID
coefficient
Rsh
100 lx
VR=10 mV TCID VR=0 V VR=0 V V4=10 mV
He-Ne
Min. Typ. Max.
RL=1 kΩ f=10 kHz (GΩ)
Laser
633 nm (µA) (µA) (pA) (times/°C) (µs)
(pF) Min. Typ.
0.34
2
3.2
5
0.5
170
2 20
0.39 2.2 3.7
0.34
2
3.0
5
0.5
160
2 20
0.39 2.2 3.7
1.12
0.34
11
16
20
2
950
0.5 5
0.39
13
19
0.34
32
44
50
7
3000 0.2 2
0.39
36
53
Photo sensitivity
S
(A/W)
λp
200 nm
(nm)
(nm)
Min. Typ.
S1227-16BQ
0.36 0.10 0.12
190 to 1000
S1227-16BR
0.43
320 to 1000
S1227-33BQ
0.36 0.10 0.12
190 to 1000
S1227-33BR
0.43
320 to 1000
720
S1227-66BQ
0.36 0.10 0.12
190 to 1000
S1227-66BR
0.43
320 to 1000
S1227-1010BQ 190 to 1000
0.36 0.10 0.12
S1227-1010BR 320 to 1000
0.43
* Window material Q: quartz glass, R: resin coating
NEP
(W/Hz1/2)
2.5 × 10-15
2.1 × 10-15
2.5 × 10-15
2.1 × 10-15
5.0 × 10-14
4.2 × 10-15
8.0 × 10-14
6.7 × 10-14
S1227 series
Si photodiode
■ Spectral response
■ Photo sensitivity temperature characteristic
(Typ. Ta=25 ˚C)
PHOTO SENSITIVITY (A/W)
0.6
S1227-BR
0.5
0.4
0.3
S1227-BQ
S1227-BQ
0.2
0.1
S1227-BR
0
190
400
600
800
(Typ. )
+1.5
TEMPERATURE COEFFICIENT (%/˚C)
0.7
+1.0
+0.5
0
-0.5
190
1000
400
600
800
1000
WAVELENGTH (nm)
WAVELENGTH (nm)
KSPDB0094EA
■ Rise time vs. load resistance
KSPDB0030EB
■ Dark current vs. reverse voltage
(Typ. Ta=25 ˚C, VR=0 V)
1 ms
(Typ. Ta=25 ˚C)
10 nA
S1227-1010BQ/BR
S1227-66BQ/BR
1 nA
S1227-66BQ/BR
DARK CURRENT
RISE TIME
100 µs
10 µs
1 µs
S1227-1010BQ/BR
100 pA
10 pA
S1227-33BQ/BR
100 ns
1 pA
S1227-16BQ/BR
S1227-16BQ/BR, -33BQ/BR
10 ns
102
103
104
100 fA
0.01
105
0.1
1
10
REVERSE VOLTAGE (V)
LOAD RESISTANCE (Ω)
KSPDB0096EA
KSPDB0095EA
■ Shunt resistance vs. ambient temperature
(Typ. VR=10 mV)
1 TΩ
10 GΩ
S1227-16BQ/BR
1 GΩ
S1227-1010BQ/BR
10 MΩ
S1227-66BQ/BR
1 MΩ
0
20
40
RL=10 Ω
60
80
RL=100 Ω
10-4
10-6
10-8
10-10
10-12
10-14
100 kΩ
10 kΩ
-20
(Typ. Ta=25 ˚C, A light source fully illuminated)
10-2
OUTPUT CURRENT (A)
SHUNT RESISTANCE
100
S1227-33BQ/BR
100 GΩ
100 MΩ
■ Photo sensitivity linearity (S1227-1010BQ/-1010BR)
10-16
10-10 10-8
DEPENDENT ON NEP
10-6
10-4
10-2
100
102
104
106
INCIDENT LIGHT LEVEL (lx)
AMBIENT TEMPERATURE (˚C)
KSPDB0097EA
KSPDB0026EB
Si photodiode
S1227 series
■ Dimensional outlines (unit: mm)
HOLE
(2 ×) 0.8
HOLE
(2 ×) 0.8
ACTIVE AREA
2.7 ± 0.1
➁ S1227-16BR
2.7 ± 0.1
➀ S1227-16BQ
ACTIVE AREA
0.5
LEAD
15 ± 0.15
13.5 ± 0.13
6.2
0.35
6.2
0.5
0.85
12.2
PHOTOSENSITIVE
SURFACE
1.5 ± 0.1
13.5 ± 0.13
PHOTOSENSITIVE
SURFACE
1.5 ± 0.1
15 ± 0.15
0.5
LEAD
ANODE MARK
ANODE MARK
8.5 ± 0.2
8.5 ± 0.2
Resin coating may extend a
maximum of 0.1 mm above the
upper surface of the package.
KSPDA0094EA
➂ S1227-33BQ
KSPDA0095EA
➃ S1227-33BR
7.6 ± 0.1
6.0 ± 0.1
2.0 ± 0.1
10.5
0.5
LEAD
0.65
0.35
2.0 ± 0.1
PHOTOSENSITIVE
SURFACE
0.5
LEAD
10.5
0.1
0.75
PHOTOSENSITIVE
SURFACE
0.35
ACTIVE AREA
6.0 ± 0.1
ACTIVE AREA
7.6 ± 0.1
4.5 ± 0.2
4.5 ± 0.2
5.0 ± 0.3
ANODE
TERMINAL MARK
ANODE
TERMINAL MARK
5.0 ± 0.3
6.6 ± 0.3
6.6 ± 0.3
Resin coating may extend a
maximum of 0.1 mm above the
upper surface of the package.
KSPDA0096EA
KSPDA0097EA
Si photodiode
➄ S1227-66BQ
S1227 series
➅ S1227-66BR
10.1 ± 0.1
8.9 ± 0.1
10.1 ± 0.1
8.9 ± 0.1
2.0 ± 0.1
10.5
0.5
LEAD
0.65
0.3
0.1
PHOTOSENSITIVE
SURFACE
10.5
0.3
0.75
PHOTOSENSITIVE
SURFACE
ACTIVE AREA
2.0 ± 0.1
ACTIVE AREA
0.5
LEAD
9.2 ± 0.3
9.2 ± 0.3
7.4 ± 0.2
7.4 ± 0.2
ANODE
TERMINAL MARK
8.0 ± 0.3
8.0 ± 0.3
ANODE
TERMINAL MARK
Resin coating may extend a
maximum of 0.1 mm above the
upper surface of the package.
KSPDA0098EA
➆ S1227-1010BQ
KSPDA0099EA
➇ S1227-1010BR
16.5 ± 0.2
0.5
LEAD
2.15 ± 0.1
10.5
10.5
0.8
PHOTOSENSITIVE
SURFACE
0.3
0.1
0.9
0.3
PHOTOSENSITIVE
SURFACE
ACTIVE AREA
2.15 ± 0.1
ACTIVE AREA
15.0 ± 0.15
15.0 ± 0.15
16.5 ± 0.2
0.5
LEAD
15.1 ± 0.3
15.1 ± 0.3
12.5 ± 0.2
ANODE
TERMINAL MARK
12.5 ± 0.2
13.7 ± 0.3
13.7 ± 0.3
ANODE
TERMINAL MARK
Resin coating may extend a
maximum of 0.1 mm above the
upper surface of the package.
KSPDA0100EA
KSPDA0101EA
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2001 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Cat. No. KSPD1036E01
Mar. 2001 DN
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