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IXYN80N90C3H1-IXYS

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Preliminary Technical Information
IXYN80N90C3H1
900V XPTTM IGBT
GenX3TM w/ Diode
High-Speed IGBT
for 20-50 kHz Switching
VCES =
=
IC90
VCE(sat) 
tfi(typ) =
900V
70A
2.7V
86ns
E
SOT-227B, miniBLOC
E153432
Symbol
Test Conditions
Maximum Ratings
VCES
VCGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1M
900
900
V
V
VGES
VGEM
Continuous
Transient
±20
±30
V
V
IC25
IC90
IF110
ICM
TC
TC
TC
TC
115
70
42
340
A
A
A
A
SSOA
(RBSOA)
VGE = 15V, TVJ = 150°C, RG = 2
Clamped Inductive Load
ICM = 160
@VCE  VCES
A
PC
TC = 25°C
500
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
2500
3000
V~
V~
1.5/13
1.3/11.5
Nm/lb.in
Nm/lb.in
30
g
= 25°C
= 90°C
= 110°C
= 25°C, 1ms
TJ
TJM
Tstg
VISOL
50/60Hz
IISOL  1mA
t = 1min
t = 1s
Md
Mounting Torque
Terminal Connection Torque
Weight
E
G
E
C
G = Gate, C = Collector, E = Emitter
 ither emitter terminal can be used as
Main or Kelvin Emitter
Features







Optimized for Low Switching Losses
Square RBSOA
Isolation Voltage 2500V~
Anti-Parallel Sonic Diode
Positive Thermal Coefficient of
Vce(sat)
High Current Handling Capability
International Standard Package
Advantages


Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
BVCES
IC
= 250μA, VGE = 0V
950
VGE(th)
IC
= 250μA, VCE = VGE
3.5
ICES
VCE = VCES, VGE = 0V
TJ = 125°C
IGES
VCE = 0V, VGE = ±20V
VCE(sat)
IC
= 60A, VGE = 15V, Note 1
TJ = 125°C
© 2015 IXYS CORPORATION, All Rights Reserved
5.5
V
Applications
V

25 μA
1.5 mA
±100
nA
2.7
V
V





2.3
2.9
High Power Density
Low Gate Drive Requirement


High Frequency Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
DS100522A(12/15)
IXYN80N90C3H1
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
gfs
IC = 60A, VCE = 10V, Note 1
23
Cies
Coes
Cres
VCE = 25V, VGE = 0V, f = 1MHz
Qg(on)
Qge
Qgc
td(on)
tri
Eon
td(off)
tfi
Eoff
td(on)
tri
Eon
td(off)
tfi
Eoff
IC = 80A, VGE = 15V, VCE = 0.5 • VCES
Inductive load, TJ = 25°C
IC = 80A, VGE = 15V
VCE = 0.5 • VCES, RG = 2
Note 2
Inductive load, TJ = 150°C
IC = 80A, VGE = 15V
VCE = 0.5 • VCES, RG = 2
Note 2
RthJC
RthCS
SOT-227B miniBLOC (IXYN)
38
S
4550
243
77
pF
pF
pF
145
42
65
nC
nC
nC
34
103
4.3
90
86
1.9
ns
ns
mJ
ns
ns
mJ
2.7
34
100
5.7
103
98
2.5
ns
ns
mJ
ns
ns
mJ
0.05
0.25 °C/W
°C/W
Reverse Sonic Diode (FRD)
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
IF = 60A, VGE = 0V, Note 1
VF
IRM
trr
IF = 60A, VGE = 0V,
-diF/dt = 700A/μs, VR = 600V
Characteristic Values
Min.
Typ.
Max.
2.7
TJ = 125°C
TJ = 125°C
1.9
V
V
41
A
420
ns
RthJC
Notes:
0.42 °C/W
1. Pulse test, t  300μs, duty cycle, d  2%.
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,860,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXYN80N90C3H1
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
Fig. 1. Output Characteristics @ TJ = 25ºC
160
VGE = 15V
14V
13V
140
12V
I C - Amperes
100
14V
250
120
I C - Amperes
VGE = 15V
300
11V
80
10V
60
13V
200
12V
150
11V
100
9V
40
20
10V
50
8V
9V
7V
0
0
0.4
0.8
1.2
1.6
2
2.4
2.8
3.2
3.6
7V
0
4
0
5
10
15
30
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
Fig. 3. Output Characteristics @ TJ = 150ºC
2.2
160
VGE = 15V
13V
12V
VGE = 15V
2.0
I C = 160A
1.8
V CE(sat) - Normalized
120
11V
I C - Amperes
25
VCE - Volts
VCE - Volts
140
20
100
80
10V
60
9V
40
1.6
1.4
I C = 80A
1.2
1.0
0.8
8V
20
I C = 40A
0.6
6V
0.4
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
-50
5.5
-25
0
VCE - Volts
50
75
100
125
150
TJ - Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage vs.
Gate-to-Emitter Voltage
Fig. 6. Input Admittance
200
7
180
TJ = 25ºC
6
160
140
IC - Amperes
5
VCE - Volts
25
I C = 160A
4
80A
40A
3
120
TJ = 150ºC
25ºC
100
- 40ºC
80
60
40
2
20
1
0
8
9
10
11
12
VGE - Volts
© 2015 IXYS CORPORATION, All Rights Reserved
13
14
15
4
5
6
7
8
9
VGE - Volts
10
11
12
IXYN80N90C3H1
Fig. 7. Transconductance
Fig. 8. Gate Charge
80
16
TJ = - 40ºC
VCE = 450V
14
60
25ºC
12
50
150ºC
10
V GE - Volts
g f s - Siemens
70
40
30
8
6
20
4
10
2
0
I C = 80A
I G = 10mA
0
0
20
40
60
80
100
120
140
160
180
200
0
220
20
40
I C - Amperes
60
80
100
120
140
QG - NanoCoulombs
Fig. 9. Capacitance
Fig. 10. Reverse-Bias Safe Operating Area
180
10,000
140
120
1,000
I C - Amperes
Capacitance - PicoFarads
160
Cies
Coes
100
80
60
100
Cres
f = 1 MHz
40
TJ = 150ºC
20
RG = 2Ω
dv / dt < 10V / ns
0
10
0
5
10
15
20
25
30
35
100
40
200
300
400
500
600
700
800
900
VCE - Volts
VCE - Volts
Fig. 11. Maximum Transient Thermal Impedance
Z(th)JC - K / W
1
0.1
0.01
0.001
0.00001
0.0001
0.001
0.01
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
0.1
1
10
IXYN80N90C3H1
Fig. 12. Inductive Switching Energy Loss vs.
Gate Resistance
Fig. 13. Inductive Switching Energy Loss vs.
Collector Current
3.4
12
Eoff
Eon -
10
2.2
6
1.8
4
Eoff - MilliJoules
Eoff - MilliJoules
I C = 80A
1.0
3
4
5
6
7
8
9
10
11
12
13
14
3
6
TJ = 150ºC
2
4
TJ = 25ºC
40
15
50
60
RG - Ohms
----
RG = 2ΩVGE = 15V
VCE = 450V
3.0
8
250
7
225
6
200
Eoff - MilliJoules
5
2.0
4
1.5
3
1.0
75
100
125
td(off) - - - -
VCE = 450V
280
175
150
200
125
160
I C = 80A
120
1
75
80
0
150
50
40
2
3
4
5
6
tfi
td(off) - - - -
VCE = 450V
tfi
140
175
100
100
TJ = 25ºC
90
50
80
25
70
80
I C - Amperes
© 2015 IXYS CORPORATION, All Rights Reserved
90
70
100
t f i - Nanoseconds
t f i - Nanoseconds
110
60
11
12
13
14
15
180
td(off) - - - 160
150
I C = 40A
140
125
120
100
100
I C = 80A
75
80
50
25
50
75
100
TJ - Degrees Centigrade
125
60
150
t d(off) - Nanoseconds
125
50
10
VCE = 450V
t d(off) - Nanoseconds
120
TJ = 150ºC
40
9
RG = 2Ω, VGE = 15V
130
150
75
8
Fig. 17. Inductive Turn-off Switching Times vs.
Junction Temperature
200
150
RG = 2Ω, VGE = 15V
175
7
RG - Ohms
Fig. 16. Inductive Turn-off Switching Times vs.
Collector Current
200
240
I C = 40A
TJ - Degrees Centigrade
225
320
100
0.5
50
tfi
2
I C = 40A
0.0
Eon - MilliJoules
2.5
360
t d(off) - Nanoseconds
I C = 80A
25
0
100
90
TJ = 150ºC, VGE = 15V
t f i - Nanoseconds
Eon
80
Fig. 15. Inductive Turn-off Switching Times vs.
Gate Resistance
4.0
Eoff
70
I C - Amperes
Fig. 14. Inductive Switching Energy Loss vs.
Junction Temperature
3.5
2
0
0
2
8
VCE = 450V
1
2
I C = 40A
----
Eon - MilliJoules
8
Eon - MilliJoules
2.6
Eon
RG = 2ΩVGE = 15V
4
VCE = 450V
1.4
10
Eoff
TJ = 150ºC , VGE = 15V
3.0
5
---
IXYN80N90C3H1
Fig. 19. Inductive Turn-on Switching Times vs.
Collector Current
Fig. 18. Inductive Turn-on Switching Times vs.
Gate Resistance
180
td(on) - - - -
76
TJ = 150ºC, VGE = 15V
VCE = 450V
140
I C = 80A
100
52
80
44
I C = 40A
60
36
40
28
20
t d(on) - Nanoseconds
60
3
4
5
6
7
8
9
10
11
12
13
14
tri
80
32
60
30
40
28
50
60
70
80
90
26
100
37
35
120
34
I C = 80A
100
33
80
32
60
31
40
30
I C = 40A
20
29
0
50
34
36
VCE = 450V
25
100
75
100
t d(on) - Nanoseconds
t r i - Nanoseconds
td(on) - - - -
RG = 2Ω, VGE = 15V
140
36
I C - Amperes
Fig. 20. Inductive Turn-on Switching Times vs.
Junction Temperature
160
120
40
15
RG - Ohms
180
TJ = 25ºC, 150ºC
20
20
2
38
RG = 2Ω, VGE = 15V
VCE = 450V
68
120
td(on) - - - -
t d(on) - Nanoseconds
140
40
tri
t r i - Nanoseconds
160
t r i - Nanoseconds
160
84
tri
125
28
150
TJ - Degrees Centigrade
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: Y_80N90C3H1(7D) 03-13-13
IXYN80N90C3H1
Fig. 22. Typ. Reverse Recovery Charge Qrr vs. -diF/dt
Fig. 21. Typ. Forward characteristics
12
120
TVJ = 125ºC
11
100
TVJ = 25ºC
IF = 120A
10
TVJ = 125ºC
Q RM [µC]
I F [A]
80
VR = 600V
60
9
60A
8
7
40
6
20
30A
5
4
0
0
0.5
1
1.5
2
2.5
600
3
700
800
VF - [V]
Fig. 23. Typ. Peak Reverse Current IRM vs. -diF/dt
90
1000
1100
1200
1300
Fig. 24. Typ. Recovery Time trr vs. -diF/dt
700
IF = 120A
TVJ = 125ºC
80
900
-diF/ dt [A/µs]
TVJ = 125ºC
VR = 600V
VR = 600V
600
60
60A
50
30A
Qrr [µC]
I RM [A]
70
500
IF = 120A
400
40
60A
300
30
30A
20
600
700
800
900
1000
1100
1200
200
1300
600
diF/dt [A/µs]
800
900
1000
1100
1200
1300
-diF/dt [A/µs]
Fig. 26. Maximum Transient Thermal Impedance ( Diode)
Fig. 25. Typ. Recovery Energy Erec vs. -diF/dt
1
4.0
TVJ = 125ºC
3.6
700
IF = 120A
VR = 600V
Z(th)JC - K / W
Erec [mJ]
3.2
2.8
60A
2.4
2.0
0.1
30A
1.6
1.2
0.8
600
700
800
900
1000
-diF /dt [A/µs]
© 2015 IXYS CORPORATION, All Rights Reserved
1100
1200
1300
0.01
0.0001
0.001
0.01
0.1
Pulse Width [s]
1
10
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